Low voltage control of exchange coupling in a ferromagnet-semiconductor quantum well hybrid structure
نویسندگان
چکیده
منابع مشابه
Strong Hall voltage modulation in hybrid ferromagnet/semiconductor microstructures
We present a new magnetoelectronic device consisting of a mm-scale semiconductor cross junction and a patterned, electrically isolated, ferromagnetic overlayer with in-plane magnetization. The large local magnetic field emanating from the edge of the thin ferromagnetic film has a strong perpendicular magnetic component, B'(r), which induces a Hall resistance, RH , in the microjunction. External...
متن کاملExchange Instabilities in Semiconductor Double Quantum Well Systems
We consider various exchange-driven electronic instabilities in semiconductor double-layer systems in the absence of any external magnetic field. We establish that there is no exchange-driven bilayer to monolayer charge transfer instability in the double-layer systems. We show that, within the unrestricted Hartree-Fock approximation, the low density stable phase (even in the absence of any inte...
متن کاملExchange-Driven Spin Relaxation in Ferromagnet-Oxide-Semiconductor Heterostructures.
We demonstrate that electron spin relaxation in GaAs in the proximity of a Fe/MgO layer is dominated by interaction with an exchange-driven hyperfine field at temperatures below 60 K. Temperature-dependent spin-resolved optical pump-probe spectroscopy reveals a strong correlation of the electron spin relaxation with carrier freeze-out, in quantitative agreement with a theoretical interpretation...
متن کاملA Comparison of Amplitude-Phase Coupling and Linewidth Enhancement in Semiconductor Quantum- Well and Bulk Lasers
The amplitude-phase coupling factor a (linewidth enhancement factor) is compared in typical semiconductor quantum-well and bulk double heterostructure lasers. As a direct consequence of the reduction of the differential gain, there is no reduction of a in the single quantum-well lasers compared to the bulk lasers. The number of quantum wells strongly affects the amplitude-phase coupling in quan...
متن کاملLaser-induced quantum coherence in a semiconductor quantum well.
The phenomenon of electromagnetically induced quantum coherence is demonstrated between three confined electron subband levels in a quantum well which are almost equally spaced in energy. Applying a strong coupling field, two-photon resonant with the 1-3 intersubband transition, produces a pronounced narrow transparency feature in the 1-2 absorption line. This result can be understood in terms ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nature Communications
سال: 2019
ISSN: 2041-1723
DOI: 10.1038/s41467-019-10774-0